to-92 plastic-encapsulate transistors C1815 transistor (npn) features power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 150 ma p c collector power dissipation 400 mw to ambient electrical characteristics (t a =25 unless otherwise specified) pa rameter symbol test c onditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c = 100ua, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c = 0. 1ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e = 100ua, i c =0 5 v collector cut-off current i cbo v cb = 60v,i e =0 0.1 ua collector cut-off current i ceo v ce = 50v, i b =0 0.1 ua emitter cut-off current i ebo v eb =5v,i c =0 0.1 ua dc current gain h fe v ce = 6 v, i c = 2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.25 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma 1 v transition frequency f t v ce =10 v, i c = 1ma f=30mhz 80 mhz collector output capacitance cob v cb =10v,i e =0 f=1mhz 3.5 pf noise figure nf v ce =6v,i c =0.1ma f =1khz,r g =10k 10 db classification of h fe rank o y gr bl range 70-140 120-240 200-400 350-700 to-92 1.emitter 2.collector 3.base a t j junction temperature 1 50 t stg storage temperature -55 ~+ 1 50 r ja thermal resistance f rom junc tion 312 / w 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification ab,oct,2012
1 10 100 10 100 1000 024681 01 2 0.000 0.002 0.004 0.006 0.008 0.010 0.012 11 0 1 10 11 01 0 0 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 0.1 1 10 100 0.01 0.1 1 0.1 1 10 100 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 i c common emitter v ce =10v t a =25 transition frequency f t (mhz) collector current i c (ma) 54ua 48ua 60ua 42ua 36ua 30ua 24ua 18ua 12ua i b =6ua common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 30 3 0.2 i c h fe 0.4 v be i c reverse voltage v (v) capacitance c (pf) f=1mhz i e =0/ i c =0 t a =25 static characteristic 20 20 c ob c ib 150 v besat t a =25 0.2 150 t a =100 common emitter v ce =6v dc current gain h fe collector current i c (ma) t a f t p c collector power dissipation p c (mw) ambient temperature t a ( ) =10 t a =100 t a =25 C1815 0.03 0.3 150 collector-emitter saturation voltage v cesat (v) collector current i c (ma) v cb / v eb c ob / c ib i c v cesat i c =10 t a =25 t a =100 2 150 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =2 5 t a =1 0 0 collector current i c (ma) base-emitter voltage v be (v) common emitter v ce =6v a 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification ab,oct,2012
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